Paper
8 January 2008 Mechanisms and high performances of chlorine-treated GaN ultraviolet photodetectors
Ching-Ting Lee, Hsin-Ying Lee, Chih-Chien Lin, Po-Sung Chen
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Abstract
A chlorination surface treatment was used to reduce the surface states of an n-type GaN surface, which improves the Schottky performances of the resultant metal-semiconductor contact. At a reverse bias of 10V, the dark current of the GaN-based UV-PDs with and without chlorinated surface treated were 28.1nA and 0.59μA, respectively. The dark current of chlorine-treated Schottky UV-PDs was 21 times of magnitude smaller than that of those without chlorination treatment. The product of quantum efficiency and internal gain of the GaN Schottky UV-PDs without and with chlorination treatment under a reverse voltage of 10V at a wavelength of 330nm was 650% and 100%, respectively. The internal gain of chlorine-treated GaN UV-PDs can be reduced due to the improvement of surface state density.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching-Ting Lee, Hsin-Ying Lee, Chih-Chien Lin, and Po-Sung Chen "Mechanisms and high performances of chlorine-treated GaN ultraviolet photodetectors", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68380M (8 January 2008); https://doi.org/10.1117/12.760196
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Cited by 2 scholarly publications.
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KEYWORDS
Gallium nitride

Photodetectors

Gallium

Quantum efficiency

Internal quantum efficiency

Ultraviolet radiation

Metals

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