Paper
9 January 2008 Single particle and momentum relaxation times in two-dimensional electron systems (updated May 14, 2008)
Sarah J MacLeod, Theodore P. Martin, Adam P. Micolich, Alex R. Hamilton
Author Affiliations +
Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 68001L (2008) https://doi.org/10.1117/12.759655
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia
Abstract
In this paper we present a detailed analysis of charged impurity scattering for two-dimensional electron systems in high quality GaAs heterostructures, using both first order perturbation theory and a more complex self-consistent multiple scattering theory. We calculate scattering due to both homogeneous background impurities and remote ionised impurities in modulation doped heterostructures. We consider both the quantum scattering time τq (important for quantum effects and devices) and the more conventional momentum relaxation time τt. Whereas the total scattering time gives an indication of the magnitude of the disorder, the ratio of τt / τq gives an indication as to the origin of the disorder.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sarah J MacLeod, Theodore P. Martin, Adam P. Micolich, and Alex R. Hamilton "Single particle and momentum relaxation times in two-dimensional electron systems (updated May 14, 2008)", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68001L (9 January 2008); https://doi.org/10.1117/12.759655
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KEYWORDS
Scattering

Nickel

Heterojunctions

Doping

Gallium arsenide

Modulation

Multiple scattering

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