Paper
30 October 2007 Using the AIMS 45-193i for hyper-NA imaging applications
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Abstract
We have tested the validity of the so-called 'vector-effect emulation mode' of the newest member of the AIMSTM family, the AIMSTM45-193i, that was recently developed for Hyper-NA applications. This vector-effect emulation mode (also called 'scanner mode') converts the measured signals into a prediction of what the image-in-resist of a Hyper-NA scanner would be (so including vector- and polarization effects). We've done a number of experiments that directly test the validity of this vector-effect emulation, by comparing them to rigorous lithographic simulations and to CD-measurements from printed NA=1.20 scanner wafers, and found that the AIMSTM 45-193i results are in fact quite accurate. Afterwards we looked at a number of potential Hyper-NA imaging applications for the AIMSTM 45-193i, again comparing it to rigorous simulations and wafer CD-measurements. These results indicate that, next to its traditional use as reticle-inspection tool, the AIMSTM 45-193i has potential use also in the wafer fab as an 'imaging-inspection' or 'OPC-defect inspection' tool, especially when applied to 2D patterns.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter De Bisschop, Vicky Philipsen, Robert Birkner, Ute Buttgereit, Rigo Richter, and Thomas Scherübl "Using the AIMS 45-193i for hyper-NA imaging applications", Proc. SPIE 6730, Photomask Technology 2007, 67301G (30 October 2007); https://doi.org/10.1117/12.746688
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CITATIONS
Cited by 16 scholarly publications and 1 patent.
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KEYWORDS
Scanners

Semiconducting wafers

Photomasks

Lithography

Inspection

Electroluminescence

Binary data

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