Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe

V. N. Ovsyuk; A. V. Yartsev

doi:10.1117/12.742637

26 April 2007 Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe

V. N. Ovsyuk, A. V. Yartsev

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663617 (2007) https://doi.org/10.1117/12.742637
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

The active and reactive part of C-V curve of MIS structure based on MBE HgCdTe is analyzed. It's shown, that HgCdTe - Si0₂ confine has a surface states density equal to 2.4 10¹¹ cm^-2. This value is not depended from conductivity type and graded-band gap presence. The n-CdHgTe has surface recombination as dominant mechanism.

Citation Download Citation

V. N. Ovsyuk and A. V. Yartsev "Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663617 (26 April 2007); https://doi.org/10.1117/12.742637

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