Photodiodes based on Pb1-xSnxSe epitaxial films

Ch. D. Jalilova; A. A. Aliyev; N. V. Faradjev; Sh. M. Alekperova

doi:10.1117/12.742325

26 April 2007 Photodiodes based on Pb_1-xSn_xSe epitaxial films

Ch. D. Jalilova, A. A. Aliyev, N. V. Faradjev, Sh. M. Alekperova

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360E (2007) https://doi.org/10.1117/12.742325
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

The features of the electrical, optical and photoelectric properties of gallium (Ga) doped Pb_1-xSn_xSe (0,03 less than or equal to x less than or equal to 0,07) epitaxial films (N_GaO,5l at%) obtained by the molecular beam condensation method (MBC) are investigated. It is established that the interband absorption edge are stipulated from nondirect transition, the value of band gap (E_g), temperature coefficient of E_g are calculated. The conditions of preparing metal - Pb_1-xSn_xSe photodiode structures are determined and capacity temperature dependence of metal - Pb_1-xSn_xSe structure are analysed. The current-voltage and capacity-voltage characteristics of the obtained photodiodes.

Citation Download Citation

Ch. D. Jalilova, A. A. Aliyev, N. V. Faradjev, and Sh. M. Alekperova "Photodiodes based on Pb_1-xSn_xSe epitaxial films", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360E (26 April 2007); https://doi.org/10.1117/12.742325

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