A semiconductor device noise model: integration of Poisson type stochastic Ohmic contact conditions with semiclassical transport

B. A. Noaman; C. E. Korman; A. J. Piazza

doi:10.1117/12.724661

8 June 2007 A semiconductor device noise model: integration of Poisson type stochastic ohmic contact conditions with semiclassical transport

B. A. Noaman, C. E. Korman, A. J. Piazza

Author Affiliations +

Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000E (2007) https://doi.org/10.1117/12.724661
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy

Abstract

In this paper we show an approach to couple two stochastic processes to describe the dynamics of independent carriers in semiconductor devices: the launch time of carriers from the contacts is described by independent Poisson launch processes, and the stochastic motion of carriers due to scattering inside the device is described by inhomogeneous Poisson type Markov processes according to the semiclassical transport theory. The coupling of the Poisson type stochastic launch process to the semiclassical dynamics will be shown, and the resulting Ohmic contact boundary conditions will be derived. For proof of concept, an expression for the autocovariance for terminal current noise for one point contact will be shown which can be easily extended to a real semiconductor device with multiple contacts.

Citation Download Citation

B. A. Noaman, C. E. Korman, and A. J. Piazza "A semiconductor device noise model: integration of Poisson type stochastic ohmic contact conditions with semiclassical transport", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000E (8 June 2007); https://doi.org/10.1117/12.724661

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