Paper
1 February 2007 MBE technology of saturable Bragg reflectors for mode locking of solid state lasers
K. Kosiel, M. Kosmala, K. Regiński, M. Bugajski
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Proceedings Volume 6599, Laser Technology VIII: Progress in Lasers; 659904 (2007) https://doi.org/10.1117/12.726595
Event: Laser Technology VIII, 2006, Szczecin, Poland
Abstract
Design and fabrication of saturable Bragg reflectors (SBRs) by molecular beam epitaxy (MBE) is presented. Grown structures consisted of AlAs/GaAs quarter-wave layers with low-temperature InGaAs/GaAs quantum wells (LT QWs) as saturable absorber layers. Special emphasis is put on methodology of wavelength tailoring of distributed Bragg reflectors and on MBE technology of growing the quantum wells with the recombination time of excitons of the order of tens ps. Application of different methods of characterization of LT QWs and SBRs for testing and optimizing the MBE process is discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Kosiel, M. Kosmala, K. Regiński, and M. Bugajski "MBE technology of saturable Bragg reflectors for mode locking of solid state lasers", Proc. SPIE 6599, Laser Technology VIII: Progress in Lasers, 659904 (1 February 2007); https://doi.org/10.1117/12.726595
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KEYWORDS
Quantum wells

Gallium arsenide

Indium gallium arsenide

Reflectors

Excitons

Distributed Bragg reflectors

Solid state lasers

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