Paper
25 January 2007 Modification of band gap in surface layer in Cd1-xZnxTe by YAG:Nd+3 laser radiation
Artur Medvid, Leonid L. Fedorenko, Dmytro V. Korbutjak, Sergiy G. Kryluk, Mikola M. Yusupov, Aleksandr Mychko
Author Affiliations +
Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 65961A (2007) https://doi.org/10.1117/12.726500
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
A mechanism of formation of graded band-gap based on Thermogradient Effect (TGE) is proposed in Cd1-xZnxTe at irradiation by second harmonic of a Q-switched YAG:Nd laser. According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms - in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence (PL) spectra studied at 5 K show that concentration of Zn atoms increases due to aggregation of VCd with Zn after laser irradiation. Formation of a graded band-gap in Cd1-xZnxTe crystal at irradiation by second harmonica of YAG:Nd laser by is shown to be possible.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Artur Medvid, Leonid L. Fedorenko, Dmytro V. Korbutjak, Sergiy G. Kryluk, Mikola M. Yusupov, and Aleksandr Mychko "Modification of band gap in surface layer in Cd1-xZnxTe by YAG:Nd+3 laser radiation", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65961A (25 January 2007); https://doi.org/10.1117/12.726500
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Cadmium

Zinc

Tellurium

Chemical species

Crystals

Semiconductors

Laser irradiation

Back to Top