Paper
17 May 2007 Design and development of a microheater on GaAs for MEMS gas sensor array
Ivan Hotovy, Vlastimil Rehacek, Tibor Lalinsky, Stefan Hascik, Fedor Mika
Author Affiliations +
Proceedings Volume 6589, Smart Sensors, Actuators, and MEMS III; 658918 (2007) https://doi.org/10.1117/12.721938
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain
Abstract
This work describes the design, simulation, fabrication and characterization of a TiN/Pt microheater prepared on GaAs micromechanical structure as a prospective device for MEMS gas sensor array. We use the electro-thermal simulation to verify the properties of the designed microstructure, which conformed achievement of the operating temperatures in the range of 200 to 320°C with heating power less than 25 mW. The average temperature gradient in the active area does not exceed 0.6 K/μm. We demonstrated the fabrication of GaAs suspended membranes, realized in two steps, by combination of surface and bulk micromachining. We also describe the development and characterization of a microheater on a GaAs membrane. The power consumption at an operating temperature of approximately 550 K is about 30 mW and the achieved thermal resistance value is 8.43 K/mW.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan Hotovy, Vlastimil Rehacek, Tibor Lalinsky, Stefan Hascik, and Fedor Mika "Design and development of a microheater on GaAs for MEMS gas sensor array", Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 658918 (17 May 2007); https://doi.org/10.1117/12.721938
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KEYWORDS
Gallium arsenide

Microelectromechanical systems

Gas sensors

Temperature sensors

Resistance

Etching

3D modeling

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