High brightness semiconductor lasers from 780-1064-nm

R. M. Lammert; W. Hu; S. W. Oh; M. L. Osowski; C. Panja; P. T. Rudy; T. Stakelon; J. E. Ungar

doi:10.1117/12.719367

10 May 2007 High brightness semiconductor lasers from 780-1064-nm

R. M. Lammert, W. Hu, S. W. Oh, M. L. Osowski, C. Panja, P. T. Rudy, T. Stakelon, J. E. Ungar

Proceedings Volume 6552, Laser Source Technology for Defense and Security III; 655212 (2007) https://doi.org/10.1117/12.719367
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

We present recent advances in high power semiconductor laser bars and arrays at near infrared wavelengths including increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness with multimode and high power single mode performance. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

Citation Download Citation

R. M. Lammert, W. Hu, S. W. Oh, M. L. Osowski, C. Panja, P. T. Rudy, T. Stakelon, and J. E. Ungar "High brightness semiconductor lasers from 780-1064-nm", Proc. SPIE 6552, Laser Source Technology for Defense and Security III, 655212 (10 May 2007); https://doi.org/10.1117/12.719367

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