Path to the HVM in EUVL through the development and evaluation of the SFET

Shigeyuki Uzawa; Hiroyoshi Kubo; Yoshinori Miwa; Toshihiko Tsuji; Hideki Morishima

doi:10.1117/12.711650

13 March 2007 Path to the HVM in EUVL through the development and evaluation of the SFET

Shigeyuki Uzawa, Hiroyoshi Kubo, Yoshinori Miwa, Toshihiko Tsuji, Hideki Morishima

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 651708 (2007) https://doi.org/10.1117/12.711650
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

We have constructed a small field exposure tool (SFET) in collaboration with EUVA, and shipped out to the Selete (Semiconductor Leading Edge Technologies; Japanese Consortium). The SFET has a field size of 0.6*0.2mm2 and two-mirror type projection optics. This machine is developed not only to assist the resist and mask development, but also to demonstrate manufacturing technologies for the full field tool. In this paper we discuss the SFET performances with aberration and flare of the projection optics and exposure results based on the simulation and exposure results. To fabricate the SFET projection optics, we improved our key manufacturing tools such as the wavefront measurement tool and the ion beam etching equipment (IBF). These machines are proved to be effective on production of the SFET, and will be applicable for the full field machines. We introduce the outline of Canon's activities for full field tool development and the other key technology such as mask handling, contamination protection and it's removal technology studies.

Citation Download Citation

Shigeyuki Uzawa, Hiroyoshi Kubo, Yoshinori Miwa, Toshihiko Tsuji, and Hideki Morishima "Path to the HVM in EUVL through the development and evaluation of the SFET", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651708 (13 March 2007); https://doi.org/10.1117/12.711650

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