State-of-the-art ZnO bulk crystal growth

T. Fukuda; Y. Mikawa; D. Ehrentraut

doi:10.1117/12.714019

20 February 2007 State-of-the-art ZnO bulk crystal growth

T. Fukuda, Y. Mikawa, D. Ehrentraut

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 647412 (2007) https://doi.org/10.1117/12.714019
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Zinc oxide (ZnO) crystals can be grown by vapor phase transport, hydrothermal solution growth, and high pressure melt growth. Three inch size single crystal has been demonstrated by the hydrothermal growth technique. We will emphasis on the hydrothermal technology of large size ZnO crystal. Material characteristics are discussed and compared to ZnO fabricated from vapor phase and melt growth. A route to obtain high-quality, single-crystalline ZnO films with mechanically untouched surfaces is employed to screen the doping of ZnO under the conditions of growth near the thermodynamic equilibrium. Future trends in ZnO crystal growth technology will be discussed.

Citation Download Citation

T. Fukuda, Y. Mikawa, and D. Ehrentraut "State-of-the-art ZnO bulk crystal growth", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647412 (20 February 2007); https://doi.org/10.1117/12.714019

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