Lanthanide impurity level location in GaN, AlN, and ZnO

P. Dorenbos; E. van der Kolk

doi:10.1117/12.698977

8 February 2007 Lanthanide impurity level location in GaN, AlN, and ZnO

P. Dorenbos, E. van der Kolk

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 647313 (2007) https://doi.org/10.1117/12.698977
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO₄ and CaF₂ is applied to locate lanthanide levels in the wideband semiconductors GaN, AlN, their solid solutions Al_xGa_1-xN, and ZnO. The proposed schemes provide a description of relevant optical and luminescence properties of these lanthanide doped semiconductors. Especially, the relation between thermal quenching of Tb³⁺ emission and the location of the energy levels is explained.

Citation Download Citation

P. Dorenbos and E. van der Kolk "Lanthanide impurity level location in GaN, AlN, and ZnO", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647313 (8 February 2007); https://doi.org/10.1117/12.698977

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