Study on metal/p-GaN contacts on p-i-n GaN-based UV detectors

Xue Li; Jun Chen; Jingtong Xu; Haimei Gong; Jiaxiong Fang

doi:10.1117/12.700018

9 February 2007 Study on metal/p-GaN contacts on p-i-n GaN-based UV detectors

Xue Li, Jun Chen, Jingtong Xu, Haimei Gong, Jiaxiong Fang

Proceedings Volume 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV; 64711B (2007) https://doi.org/10.1117/12.700018
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The contact of p-GaN was formed under different annealing condition, and its effect on p-i-n GaN-based detectors was studied by current-voltage (I-V) measurements and the response spectra. The parameters of metal/p-GaN interface were obtained by fitting the forward I-V curves. The results show that ideal factor of metal-semiconductor ( M-S) contacts annealed at 550°C for 3min is about 1.19, which means the formation of good ohmic contacts at the M-S interface and leads a lower turn-on voltage. But metal/p-GaN contacts have no obvious effect on response spectra of detectors.

Citation Download Citation

Xue Li, Jun Chen, Jingtong Xu, Haimei Gong, and Jiaxiong Fang "Study on metal/p-GaN contacts on p-i-n GaN-based UV detectors", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64711B (9 February 2007); https://doi.org/10.1117/12.700018

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