Paper
8 January 2007 MOEMS development of infrared security sensors
Author Affiliations +
Proceedings Volume 6414, Smart Structures, Devices, and Systems III; 641417 (2007) https://doi.org/10.1117/12.695680
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2006, Adelaide, Australia
Abstract
This paper discusses progress in the development of a new generation of passive infrared (PIR) security sensors for the high volume military, industrial and consumer markets. Recent work on patented sensor technology is described, including the mosaic pixel focal plane array concept (MP-FPA), which enables enhanced sensor performance to be achieved with low cost optics and cheap packaging. MOEMS technology is employed for fabrication of silicon microbolometer detector arrays, which are integrated on-chip with a CMOS readout integrated circuit, and can be fabricated by large scale production methods in a silicon-based MEMS foundry. The paper addresses the application of this technology to PIR security sensors.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin C. Liddiard "MOEMS development of infrared security sensors", Proc. SPIE 6414, Smart Structures, Devices, and Systems III, 641417 (8 January 2007); https://doi.org/10.1117/12.695680
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Microbolometers

Staring arrays

Infrared sensors

Silicon

Target detection

Resistance

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