Paper
20 October 2006 Measuring force uniformity during electrostatic chucking of EUVL masks
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Abstract
Electrostatic chucks are used to support and flatten extreme ultraviolet lithography (EUVL) masks during exposure scanning. Characterizing and predicting the capability of electrostatic chucks to reduce mask nonflatness to meet the required specifications are critical issues. Previous research has assumed that the electrostatic force is uniform over the entire chucking area; however, recent results from chucking experiments suggest this may not be the case. Quantifying the spatial nonuniformity in electrostatic force is critical for the understanding and modeling of electrostatic chucking of masks in EUVL systems. The present research proposes a novel approach to identify the local electrostatic pressure, by analyzing experimental interferometric data and comparing it to analytical and finite element modeling results. The local analysis can be expanded to a global prediction spanning the entire electrostatic chucking surface.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaewoong Sohn, Sathish Veerarghavan, Kevin T. Turner, Roxann L. Engelstad, and Chris K. Van Peski "Measuring force uniformity during electrostatic chucking of EUVL masks", Proc. SPIE 6349, Photomask Technology 2006, 63493B (20 October 2006); https://doi.org/10.1117/12.686282
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Extreme ultraviolet lithography

Photomasks

Particles

Analytical research

Dielectrics

Data modeling

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