Mask specification for for wafer process optimization

Lin Chen; Phil Freiberger; Jeff Farnsworth; Ruth Stritsman; Richard P. Rodrigues

doi:10.1117/12.686610

20 October 2006 Mask specification for for wafer process optimization

Lin Chen, Phil Freiberger, Jeff Farnsworth, Ruth Stritsman, Richard P. Rodrigues

Proceedings Volume 6349, Photomask Technology 2006; 634917 (2006) https://doi.org/10.1117/12.686610
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

Mask specification has been playing ever-increasing role for wafer process optimization with tightening design rule. It is very critical to optimize specifications and sampling sizes to ensure quality as well as minimize cost and TPT for high volume manufacturing. In this paper, key parameters for mask specification affecting wafer litho process window will be discussed. Examples of how to derive key mask specification based on the litho process margin will be examined. The mask CD targeting control and plate to plate CD variation reduction strategy will be discussed.

Citation Download Citation

Lin Chen, Phil Freiberger, Jeff Farnsworth, Ruth Stritsman, and Richard P. Rodrigues "Mask specification for for wafer process optimization", Proc. SPIE 6349, Photomask Technology 2006, 634917 (20 October 2006); https://doi.org/10.1117/12.686610

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