Mask CD correction method using dry-etch process

Ho Yong Jung; Tae Joong Ha; Jae Cheon Shin; Ku Cheol Jeong; Young Kee Kim; Oscar Han

doi:10.1117/12.686537

20 October 2006 Mask CD correction method using dry-etch process

Ho Yong Jung, Tae Joong Ha, Jae Cheon Shin, Ku Cheol Jeong, Young Kee Kim, Oscar Han

Proceedings Volume 6349, Photomask Technology 2006; 63490B (2006) https://doi.org/10.1117/12.686537
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

In this study, the method for achieving precise CD MTT (critical dimension mean to target) in manufacturing attenuated PSM (phase shift mask) was investigated. As the specification for photomask becomes tighter, more precise control of CD is required. There are several causes to result in CD MTT error. In general mask patterning processes which are from blank material to dry etch, it is difficult to detect CD MTT error before final CD measurement and correct it. It is necessary to apply new process to mask production to correct CD error and control CD MTT precisely. Reducing number of factors which can have an effect on CD and introducing reliable method to correct CD error are important to achieve accurate CD MTT. For the correction of CD error, the reliability of CD in each measurement step such as resist CD or Cr CD before and after resist removal and effect on items related with CD like CD uniformity, isolated-dense CD difference, etc should be considered and evaluated. In this method to correct CD MTT error, Cr CD after removing resist was measured before MoSiN dry etch and additional corrective Cr dry etch using Cr CD information was applied to cancel CD error and then MoSiN dry etch was followed. In this case, factors affecting final CD are additional corrective Cr etch and MoSiN etch. The relationship between CD shift and corrective Cr etch time for masks with various pattern densities was found and necessary corrective Cr etch time was applied to CD correction process. The CD MTT error is canceled by additional corrective Cr dry etch step. As a result, accurate CD control and significant decrease of CD MTT error for attenuated PSM is achieved through the use of this CD correction method.

Citation Download Citation

Ho Yong Jung, Tae Joong Ha, Jae Cheon Shin, Ku Cheol Jeong, Young Kee Kim, and Oscar Han "Mask CD correction method using dry-etch process", Proc. SPIE 6349, Photomask Technology 2006, 63490B (20 October 2006); https://doi.org/10.1117/12.686537

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