Paper
10 June 2006 Design method of active multichannel silicon neural microelectrode
Di Wang, Guo-xiong Zhang, Xing-fei Li
Author Affiliations +
Proceedings Volume 6344, Advanced Laser Technologies 2005; 63442J (2006) https://doi.org/10.1117/12.693649
Event: Advanced Laser Technologies 2005, 2005, Tianjin, China
Abstract
The objective of this paper is to find a method to design an active multichannel silicon microelectrode which is used to measure the neural signal. A circuit model when measuring the neural signal using the silicon microelectrode is proposed based on the structure and fabrication process of the microelectrode. The method of determining the dimensional parameters of the probe shank is discussed in the following three aspects: the structure of pallium and endocranium, efficient, coupled interconnects noise and strength characteristic of neural probe. The design criterion is to minimize the size of the neural probe and increase its stiffness to pierce the endocranium. The on-chip unity-gain bandpass amplifier has an overall gain of 40 over a bandwidth from 60Hz to 10 kHz; an input loadits resistance is designed to be above 30MΩ to guarantee a cutoff frequency below 100 Hz.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Di Wang, Guo-xiong Zhang, and Xing-fei Li "Design method of active multichannel silicon neural microelectrode", Proc. SPIE 6344, Advanced Laser Technologies 2005, 63442J (10 June 2006); https://doi.org/10.1117/12.693649
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KEYWORDS
Silicon

Electrodes

Resistance

Amplifiers

Capacitance

Electromechanical design

Signal processing

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