Cd0.55Mn0.45Te crystal growth, microstructure, and electrical resistivity

M. A. Black; T. Orlova; F. Y. Lu; L. Li

doi:10.1117/12.680610

11 September 2006 Cd_0.55Mn_0.45Te crystal growth, microstructure, and electrical resistivity

M. A. Black, T. Orlova, F. Y. Lu, L. Li

Proceedings Volume 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII; 631913 (2006) https://doi.org/10.1117/12.680610
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

Crystals of the compound semiconductor Cd_0.55Mn_0.45Te were grown by modified Bridgeman technique. The resulting crystals were transparent, with a deep red color. There were no precipitates visible up to the 1.5μm resolution of the optical transmission microscopy system used. The electrical resistivity was measured to be 1x10⁵Ωcm. The ability to grow large precipitate free crystals makes this system a good candidate for radiation detector elements. Electrical properties must be improved through better control of the concentration of electronically active impurities.

Citation Download Citation

M. A. Black, T. Orlova, F. Y. Lu, and L. Li "Cd_0.55Mn_0.45Te crystal growth, microstructure, and electrical resistivity", Proc. SPIE 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII, 631913 (11 September 2006); https://doi.org/10.1117/12.680610

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