Preparation And Lithographic Properties Of Poly(Trimethylsilylmethyl Methacrylate-Co-Chloromethyl Styrene)

Anthony E. Novembre; Elsa Reichmanis; Myrtle Davis

doi:10.1117/12.963620

9 July 1986 Preparation And Lithographic Properties Of Poly(Trimethylsilylmethyl Methacrylate-Co-Chloromethyl Styrene)

Anthony E. Novembre, Elsa Reichmanis, Myrtle Davis

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963620
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

The random copolymer comprised of trimethylsilylmethyl methacrylate (SI) and chloromethyl styrene (CMS) is shown to function as a negative acting e-beam and deep UV resist. The resist is prepared using free radical solution polymerization techniques. Reactivity ratios were calculated using the least squares treatment of Fineman-Ross, and were determined to be 0.49 and 0.54 for SI and CMS, respectively. This material exhibits etching resistance in an 0₂ reactive ion etching discharge, and is applicable to bileveli pthographic processes. The resist system exhibits an e-beam and deep UV sensitivity (pg. ) equal to 1.95 11C/cm² and 18mJ/cm², respectively. The ratio of etching rates of the planarizing layer HPR-206 to this material is 12 to 1 in 0₂. Preliminary results indicate this system to have submicron resolution capability.

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Anthony E. Novembre, Elsa Reichmanis, and Myrtle Davis "Preparation And Lithographic Properties Of Poly(Trimethylsilylmethyl Methacrylate-Co-Chloromethyl Styrene)", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963620

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