Sheet Resistance Low Dose Monitoring Using The Double Implant Technique

A. K. Smith; W. H. Johnson; W. A. Keenan

doi:10.1117/12.961194

26 June 1986 Sheet Resistance Low Dose Monitoring Using The Double Implant Technique

A. K. Smith, W. H. Johnson, W. A. Keenan

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961194
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Sheet resistance has become an industry standard for monitoring high and medium dose ion implants. For low dose there are two sheet resistance techniques available, the direct implant technique and the double implant technique. Careful processing has extended the range of direct sheet resistance measurements down to doses of 2E11 ions/cm2. The double implant technique requires an initial implant to create an easily measured sheet resistance layer that serves as the test vehicle for the second implant. The dose of the second implant is measured by monitoring the change in the sheet resistance due to the implant damage created by the second implant into the first. This double implant technique is not limited to low dose nor to species that are electrically active in the substrate.

Citation Download Citation

A. K. Smith, W. H. Johnson, and W. A. Keenan "Sheet Resistance Low Dose Monitoring Using The Double Implant Technique", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961194

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