Influence Of Interfacial Oxide On Ion Mixing Of Al Bilayers: Measurement Of Interfacial Oxide

X.-A . Zhao; T. C. Banwell; M-A . Nicolet

doi:10.1117/12.961216

26 June 1986 Influence Of Interfacial Oxide On Ion Mixing Of Al Bilayers: Measurement Of Interfacial Oxide

X.-A . Zhao, T. C. Banwell, M-A . Nicolet

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961216
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The elastic resonance scattering of 3.05 MeV ⁴He⁺⁺by ¹⁶0 is studied for the case where the oxygen is present as an interfacial impurity between a Si substrate and a metallic overlain film. A simple model is developed and experimentally tested to describe the effect of the overlayer on the excitation curve and on the incident beam energy required to obtain resonance. This analytical method is very useful to study the influence of interfacial oxygen on the reaction of metallic overlayers, as shown by specific results with Al.

Citation Download Citation

X.-A . Zhao, T. C. Banwell, and M-A . Nicolet "Influence Of Interfacial Oxide On Ion Mixing Of Al Bilayers: Measurement Of Interfacial Oxide", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961216

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available