Paper
18 May 2006 A 32×32 array of polycrystalline PbSe opens up the market of very low cost MWIR sensitive photon detectors
G. Vergara, M. T. Rodrigo, M. C. Torquemada, L. J. Gómez, V. Villamayor, M. Álvarez, M. Verdú, F. J. Sánchez, R. Almazán, J. Plaza, P. Rodríguez, I. Catalán, J. Diezhandino, M. T. Montojo
Author Affiliations +
Abstract
The existing technology for uncooled MWIR photon detectors, based on polycrystalline lead salts, is stigmatized for being a 50-year-old technology, and it has been traditionally relegated to single-element detectors and relatively small linear arrays due to the chemical deposition techniques used on the manufacturing process. Along the last 10 years, it has been developed an innovative technology based on thermal evaporation of polycrystalline PbSe in vacuum at CIDA. In this work a new 32x32 format FPA is presented. These devices, processed on 4" silicon wafers, have a pitch of 200 μm and a filling factor of 80 %. It is a remarkable fact that the manufacturing process has been optimized and adapted to high volume requirements, allowing a considerable unitary cost reduction. Preliminary calculus based on experimental processing yields show that now, as it, is possible to deliver devices with a price per unit around 1000 $. This photonic detector is sensitive to MWIR radiation with a value of detectivity around one order of magnitude higher than that of the best thermal detector, and also much faster. Taking that into account, it can be asserted without any doubt that there is a new player in the domain of very low cost IR devices.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Vergara, M. T. Rodrigo, M. C. Torquemada, L. J. Gómez, V. Villamayor, M. Álvarez, M. Verdú, F. J. Sánchez, R. Almazán, J. Plaza, P. Rodríguez, I. Catalán, J. Diezhandino, and M. T. Montojo "A 32×32 array of polycrystalline PbSe opens up the market of very low cost MWIR sensitive photon detectors", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62062Y (18 May 2006); https://doi.org/10.1117/12.664365
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Cited by 5 scholarly publications.
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KEYWORDS
Sensors

Mid-IR

Semiconducting wafers

Manufacturing

Silicon

Photodetectors

Infrared sensors

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