Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

B. A. Park; C. A. Musca; J. Antoszewski; T. Nguyen; K. J. Winchester; J. M. Dell; L. Faraone

doi:10.1117/12.664872

18 May 2006 Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

B. A. Park, C. A. Musca, J. Antoszewski, T. Nguyen, K. J. Winchester, J. M. Dell, L. Faraone

Author Affiliations +

Proceedings Volume 6206, Infrared Technology and Applications XXXII; 62062G (2006) https://doi.org/10.1117/12.664872
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

Exposure of p-type HgCdTe material to H2-based plasma is known to result in p-to-n conductivity type conversion. While this phenomenon is generally undesirable when aiming to perform physical etching for device delineation and electrical isolation, it can be utilized in a novel process for formation of n-on-p junctions. The properties of this n-type converted material are dependent on the condition of the plasma to which it is exposed. This paper investigates the effect of varying the plasma process parameters in an inductively coupled plasma reactive ion etching (ICPRIE) tool on the carrier transport properties of the p-to-n type converted material. Quantitative mobility spectrum analysis of variable-field Hall and resistivity data has been used to extract the carrier transport properties. In the parameter space investigated, the n-type converted layer carrier transport properties and depth have been found to be most sensitive to the plasma process pressure and temperature. The levels of both RIE and ICP power have also been found to have a significant influence.

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B. A. Park, C. A. Musca, J. Antoszewski, T. Nguyen, K. J. Winchester, J. M. Dell, and L. Faraone "Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62062G (18 May 2006); https://doi.org/10.1117/12.664872

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