Paper
22 April 2006 Miniaturized InSb photovoltaic infrared sensor operating at room temperature
E. G. Camargo, N. Kuze, K. Ueno, Y. Kawakami, Y. Moriyasu, K. Nagase, M. Sato, H. Endo, K. Ishibashi, M. Ozaki
Author Affiliations +
Abstract
This paper reports the development of a novel InSb photovoltaic infrared sensor (InSb PVS) operating at room temperature. The InSb PVS consists of an InSb p+/p-/n+ structure grown on semi-insulating GaAs (100) substrate, with a p+ Al0.17In0.83Sb barrier layer between p+ and p- layers to reduce diffusion of photo-excited electrons. Photodiodes were fabricated by wet etching process and, using a 500K blackbody, we obtained D* of 2.8x108 cmHz1/2/W and RV of 1.9 kV/W at room temperature. S/N was improved with the serial connection of 700 photodiodes patterned on a 600x600 μm2 chip. Increasing the number (N) of connected photodiodes, S/N ratio was improved by a factor of N1/2. RV was constant for signals ranging from DC to 500Hz. From spectral response measurements a cut-off wavelength of 6.8 μm was obtained. The InSb PVS was flip-chip bonded on a pre-amplifier IC, allowing the shortest connection between the InSb PVS and the pre-amplifier, making the system immune to electromagnetic noise. The system was finally encapsulated by a Dual Flat Non-leaded (DFN) package with a window, which exposes the backside of the GaAs substrate allowing the infrared light incidence. The device external sizes are 2.2 mm x 2.7 mm x 0.7 mm and to our knowledge is the smallest uncooled sensor for the middle-infrared range reported until now.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. G. Camargo, N. Kuze, K. Ueno, Y. Kawakami, Y. Moriyasu, K. Nagase, M. Sato, H. Endo, K. Ishibashi, and M. Ozaki "Miniaturized InSb photovoltaic infrared sensor operating at room temperature", Proc. SPIE 6189, Optical Sensing II, 61890Z (22 April 2006); https://doi.org/10.1117/12.663162
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Cited by 8 scholarly publications.
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KEYWORDS
Photodiodes

Sensors

Photovoltaics

Gallium arsenide

Infrared sensors

Resistance

Black bodies

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