Interferometric and confocal techniques for testing of silicon wafers

J. Galas; D. Litwin; S. Sitarek; B. Surma; B. Piatkowski; A. Miros

doi:10.1117/12.662234

27 April 2006 Interferometric and confocal techniques for testing of silicon wafers

J. Galas, D. Litwin, S. Sitarek, B. Surma, B. Piatkowski, A. Miros

Proceedings Volume 6188, Optical Micro- and Nanometrology in Microsystems Technology; 61880C (2006) https://doi.org/10.1117/12.662234
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

The paper provides new insights into Silicon wafer measurements in context of technological problems of developing a sophisticated measurement technique, which harnesses helium atom beam as a probe. Nano-resolution imaging techniques such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) are well-know in surface science. A scanning helium atom microscope, where a focused beam of low energy, neutral helium atoms is used as an imaging probe is a new concept creating non-destructive and non-invasive surface investigation tool in science and industry. This paper is focused on measurements of flatness and thickness of the wafer, which is used as a deflecting mirror of the helium beam. Two -optics based- measurement techniques are presented: scanning confocal system and the Fizeau interferometer. The latter is applied as a quick reference device placed close to the production line whereas the former offers high accuracy flatness and thickness maps of the wafers.

Citation Download Citation

J. Galas, D. Litwin, S. Sitarek, B. Surma, B. Piatkowski, and A. Miros "Interferometric and confocal techniques for testing of silicon wafers", Proc. SPIE 6188, Optical Micro- and Nanometrology in Microsystems Technology, 61880C (27 April 2006); https://doi.org/10.1117/12.662234

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