Dense OPC and verification for 45nm

Nicolas Cobb; Dragos Dudau

doi:10.1117/12.659449

15 March 2006 Dense OPC and verification for 45nm

Nicolas Cobb, Dragos Dudau

Proceedings Volume 6154, Optical Microlithography XIX; 61540I (2006) https://doi.org/10.1117/12.659449
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

In this paper, we expand on previous work in which we investigated algorithms and cost functions for dense OPC. We explore using multiple contours at different process conditions in order to generate "process window OPC". We analyze and discuss the computational cost of the dense OPC approach in comparison to sparse OPC. We also discuss the flexibility to use any possible resist model inside a dense OPC system. We show how the dense OPC system can be used together with dense, contour-based verification for the 45nm node. The dense verification and OPC tools provide a framework for lithography friendly design and DFM for the 45nm manufacturing node.

Citation Download Citation

Nicolas Cobb and Dragos Dudau "Dense OPC and verification for 45nm", Proc. SPIE 6154, Optical Microlithography XIX, 61540I (15 March 2006); https://doi.org/10.1117/12.659449

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