Paper
29 March 2006 Parameter investigation of PEB sensitivity
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Abstract
Post exposure bake temperature sensitivity (PEB sensitivity) becomes important as the pattern pitch size shrinks gradually. There are several factors affecting the PEB sensitivity including acidity and diffusion of photogenerated acid, activation energy for deprotection reaction, free volume of base polymer, and so on. Our works were conducted as a part of the basic study for searching influential parameter of PEB sensitivity. We found that PEB sensitivity relies largely on not only acid diffusion parameter, but also the hydrophilicity of base polymer and protection group ratio. Also, we observed that bulkiness of deprotection group has great influence on PEB sensitivity. Detailed results will be reported in this paper.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seung Keun Oh, Eun Kyung Son, Chan Sik Park, Jung Youl Lee, Jeong Woo Kim, Jae Woo Lee, Deog Bae Kim, Jaehyun Kim, Geunsu Lee, and Seung-Chan Moon "Parameter investigation of PEB sensitivity", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615335 (29 March 2006); https://doi.org/10.1117/12.655449
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KEYWORDS
Polymers

Diffusion

Critical dimension metrology

Molecules

Monochromatic aberrations

Photoresist processing

Semiconducting wafers

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