3D isolated and periodic grooves measurement simulations the semiconductor circuits by scatterometry using the FDTD methods and the time shortening calculation method

Hirokimi Shirasaki

doi:10.1117/12.654315

24 March 2006 3D isolated and periodic grooves measurement simulations for semiconductor circuits by scatterometry using the FDTD methods and the time shortening calculation method

Hirokimi Shirasaki

Author Affiliations +

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61523O (2006) https://doi.org/10.1117/12.654315
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

First, we establish numerical calculation techniques for the three-dimensional arbitrary cross section measurement equipment production using oblique incident light waves. In the 3D analysis, the enormous calculation times are problematic to analyze arbitrary cross sections using the FDTD (Finite Difference Time Domain) methods. Then, the sub-grids are used for the time shortening analysis. The sub-grid methods are carried out by the adoption to change the cell dimensions in some specific regions. The multilayer thin film parts are necessary to use the small lattice because we had to deal with the small shape changes. Second, the Gaussian beam incidence analysis for non periodic and isolated grooves is examined. The spot beams are needed for the analysis of the 3D isolation grooves. The scattering characteristics are examined using the spot size of 0.2-1.0 microns. Third, the cell size in the FDTD method must be small enough (

Citation Download Citation

Hirokimi Shirasaki "3D isolated and periodic grooves measurement simulations for semiconductor circuits by scatterometry using the FDTD methods and the time shortening calculation method", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61523O (24 March 2006); https://doi.org/10.1117/12.654315

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