Paper
24 March 2006 Minimizing CD measurement bias through realtime acquisition of 3D feature shapes
Johann Foucher, Dmitry Gorelikov, Marc Poulingue, Pascal Fabre, Ganesh Sundaram
Author Affiliations +
Abstract
CD measurement bias has long been reported as an inherent artifact of CD-SEM measurements. However, as feature dimensions decrease and line-to-space ratios increase, the magnitude of previously acceptable levels of measurement bias requires re-examination. Traditional attempts at correcting the bias has entailed slow, destructive or laborious techniques, such as comparisons of top-down CD-SEM measurements using standard algorithms with cross-section information, or correlating top-down data with complex tilted images. In this paper we expand the application of Critical Shape Metrology - a physics-based metrology technique for 3-D profile acquisition based on CD-SEM, to minimizing CD bias in real-time for a variety of feature dimensions and profiles. Samples used for the experiments were fabricated through E-Beam lithography and 193 lithography with a wide variation of sidewall angles and CDs, so that the measurement bias could be assessed over a sufficiently large range of patterned shapes. Reference measurements were performed using a CD-AFM and FIB-SEM
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Johann Foucher, Dmitry Gorelikov, Marc Poulingue, Pascal Fabre, and Ganesh Sundaram "Minimizing CD measurement bias through realtime acquisition of 3D feature shapes", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521A (24 March 2006); https://doi.org/10.1117/12.660233
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KEYWORDS
Atomic force microscopy

Semiconducting wafers

Critical dimension metrology

Scanning electron microscopy

3D metrology

3D acquisition

Metrology

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