Design-driven metrology: a new paradigm for DFM-enabled process characterization and control, extensibility, and limitations

Luigi Capodieci

doi:10.1117/12.659181

24 March 2006 Design-driven metrology: a new paradigm for DFM-enabled process characterization and control: extensibility and limitations

Luigi Capodieci

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Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 615201 (2006) https://doi.org/10.1117/12.659181
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

After more than 2 years of development, Design-Driven Metrology (DDM) is now being introduced into production flows for semiconductor manufacturing, with initial applications targeted at 65 nm and below, but also backward-compatible to 90 nm and above nodes. This paper presents the fundamental components of the DDM framework, and the characteristic architectural relationships among these elements. The discussion includes current status and future prospects for this new metrology paradigm, which represents the true enabler for Design For Manufacturability (DFM) flows and applications. At the core of Design-Driven Metrology lies the simple but powerful concept of utilizing physical design layouts, and more specifically (X,Y) coordinates and polygonal shapes, to automate the generation of metrology jobs. Derived from 10 year old practices of Optical Proximity Correction, the adoption of CAD tools for visualization and manipulation of design layouts, in everyday lithography work, has provided the essential infrastructure for metrology automation. The in-depth discussion of data-flow and system architecture is followed by a presentation of key DDM applications, with specific emphasis on CDSEM metrology, ranging from process development and yield optimization to circuit design. The study concludes with an analysis of the extendibility of DDM and derived flows to other metrology areas in semiconductor manufacturing.

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Luigi Capodieci "Design-driven metrology: a new paradigm for DFM-enabled process characterization and control: extensibility and limitations", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615201 (24 March 2006); https://doi.org/10.1117/12.659181

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KEYWORDS

Metrology

Optical proximity correction

Computer aided design

Semiconducting wafers

Scanning electron microscopy

Photomasks

Process control

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