This paper mainly discusses the Si film which is deposited on the GaAs substrate with the IBAD E-beam coating system. By changing the technical conditions to get Si film with different parameters. Further studied on the test, and optimized processing parameter to get final Si film with more dense structure, higher index and minimum absorption. At the same time, considering the better stress matching of the substrate, selected minimal possible layers but realized even more reflection in the process of matching lower index materials. The mainly parameters are temperature of substrate, vacuum pressure, deposition speed and different gas flow, etc. Detailed analysis and evaluation based on the measuring curves and result of the Si test are presented.
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