Paper
9 June 2006 Different deposition technology affecting structure and performance of Si film
Xiuhua Fu, Peng Lu, Baoxue Bo, Xiumin Li, Ruojing Yin, Weibo Duan
Author Affiliations +
Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 614937 (2006) https://doi.org/10.1117/12.674325
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China
Abstract
This paper mainly discusses the Si film which is deposited on the GaAs substrate with the IBAD E-beam coating system. By changing the technical conditions to get Si film with different parameters. Further studied on the test, and optimized processing parameter to get final Si film with more dense structure, higher index and minimum absorption. At the same time, considering the better stress matching of the substrate, selected minimal possible layers but realized even more reflection in the process of matching lower index materials. The mainly parameters are temperature of substrate, vacuum pressure, deposition speed and different gas flow, etc. Detailed analysis and evaluation based on the measuring curves and result of the Si test are presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiuhua Fu, Peng Lu, Baoxue Bo, Xiumin Li, Ruojing Yin, and Weibo Duan "Different deposition technology affecting structure and performance of Si film", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 614937 (9 June 2006); https://doi.org/10.1117/12.674325
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KEYWORDS
Silicon

Absorption

Reflection

Ions

Gallium arsenide

Aluminum

Coating

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