Influence of Ta doping on the phase transition characteristics of VO<sub>2</sub> polycrystalline thin films

Jinhua Li; Ningyi Yuan; Taibin Xie; Didi Dan

doi:10.1117/12.674198

9 June 2006 Influence of Ta doping on the phase transition characteristics of VO₂ polycrystalline thin films

Jinhua Li, Ningyi Yuan, Taibin Xie, Didi Dan

Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 61490B (2006) https://doi.org/10.1117/12.674198
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China

Abstract

V₂O₅ and Ta₂O₅ mixed powders were pressed as sputtering target. Ta-doped vanadium oxide thin films were deposited on SiO₂ substrates by modified Ion Beam Enhanced Deposition (IBED) method. The VO₂ film with a preferential orientation (002) was formed after post-annealing in nitrogen or argon atmosphere. The measurement results of resistance dependence on temperature indicated that the vanadium dioxide films showed a typical characteristic of phase transition. The phase transition temperature of the IBED VO₂ film doped with 3 atm.% Ta decreased from 68^oC to about 48^oC. The reasons why the Ta-doping decrease the phase transition temperature were as followed: the atom radius of Ta larger than that of V atom, which introduce strain in the grain; the replacement of When V⁴⁺ replaced by Ta⁵⁺ the ionic bond could elongate and introduce superfluous electrons in the d valence shell, then make the gap of d energy band to decrease.

Citation Download Citation

Jinhua Li, Ningyi Yuan, Taibin Xie, and Didi Dan "Influence of Ta doping on the phase transition characteristics of VO₂ polycrystalline thin films", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61490B (9 June 2006); https://doi.org/10.1117/12.674198

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