End-pumped vertical external cavity surface emitting laser

Taek Kim; Junho Lee; Sangmoon Lee; Jaeryung Yoo; Kisung Kim; Junyoun Kim; Soohaeng Cho; Seongjin Lim; Gibum Kim; Yongjo Park

doi:10.1117/12.641988

10 February 2006 End-pumped vertical external cavity surface emitting laser

Taek Kim, Junho Lee, Sangmoon Lee, Jaeryung Yoo, Kisung Kim, Junyoun Kim, Soohaeng Cho, Seongjin Lim, Gibum Kim, Yongjo Park

Author Affiliations +

Proceedings Volume 6132, Vertical-Cavity Surface-Emitting Lasers X; 61320D (2006) https://doi.org/10.1117/12.641988
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We report on a 1060 nm single transverse mode operation of an end-pumped vertical external cavity surface emitting laser (VECSEL). End-pumping scheme is enabled by capillary bonding of a VECSEL chip with a diamond heat spreader followed by a GaAs substrate removal by selective wet etching. The VECSEL structure is consisted of 10 periods of resonant periodic gain with an 8 nm InGaAs single quantum well at the antinodes of the standing wave optical field and a 35 pair AlAs/AlGaAs bottom distributed Brag reflector (DBR). Optical pump efficiency through the bottom mirror is enhanced by a modified DBR structure with a reduced reflectance in 808 nm pump wavelength region. A low threshold pump density of 433 W/cm² and over 45 W/W optical to optical conversion efficiency are achieved with reflectivity of 94 % output coupler at the heat spreader temperature of 20°C. The laser operates in a circular TEM₀₀ mode (M²<1.5) up to 7 W, and maximum power of 9.1 W is limited by our pump laser power.

Citation Download Citation

Taek Kim, Junho Lee, Sangmoon Lee, Jaeryung Yoo, Kisung Kim, Junyoun Kim, Soohaeng Cho, Seongjin Lim, Gibum Kim, and Yongjo Park "End-pumped vertical external cavity surface emitting laser", Proc. SPIE 6132, Vertical-Cavity Surface-Emitting Lasers X, 61320D (10 February 2006); https://doi.org/10.1117/12.641988

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