Photonic integration for high-density and multifunctionality in the InP-material system

F. Robin; D. Erni; S. Costea; P. Cristea; X. Cui; Y. Fedoryshyn; E. Gini; C. Hafner; R. Harbers; J. Holzman; H.-J. Lohe; P. Ma; K. Rauscher; R. Scollo; G. Stark; P. Strasser; W. Vogt; R. Wüest; H. Jäckel

doi:10.1117/12.652109

3 March 2006 Photonic integration for high-density and multifunctionality in the InP-material system

F. Robin, D. Erni, S. Costea, P. Cristea, X. Cui, Y. Fedoryshyn, E. Gini, C. Hafner, R. Harbers, J. Holzman, H.-J. Lohe, P. Ma, K. Rauscher, R. Scollo, G. Stark, P. Strasser, W. Vogt, R. Wüest, H. Jäckel

Author Affiliations +

Proceedings Volume 6124, Optoelectronic Integrated Circuits VIII; 612415 (2006) https://doi.org/10.1117/12.652109
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Monolithic photonic integration offers unsurpassed perspectives for higher functional density, new functions, high per-formance, and reduced cost for the telecommunication. Advanced local material growth techniques and the emerging photonic crystal (PhC) technology are enabling concepts towards high-density photonic integration, unprecedented per-formance, multi-functionality, and ultimately optical systems-on-a-chip. In this paper, we present our achievements in photonic integration applied to the fabrication of InP-based mode-locked laser diodes capable of generating optical pulses with sub-ps duration using the heterogeneous growth of a new uni-traveling carrier ultrafast absorber. The results are compared to simulations performed using a distributed model including intra-cavity reflections at the sections inter-faces and hybrid mode-locking. We also discuss our work on InP-based photonic crystals (PhCs) for dense photonic integration. A combination of two-dimensional modeling for functional optimization and three-dimensional simulation for real-world verification is used. The fabricated structures feature more than 3.5μm deep holes as well as excellent pattern-transfer accuracy using electron-beam lithography and advanced proximity-effects correction. Passive devices such as waveguides, 60° bends and power splitters are characterized by means of the end-fire technique. The devices are also investigated using scanning-near field optical microscopy. The PhC activity is extended to the investigation of TM bandgaps for all-optical switches relying on intersubband transitions at 1.55μm in AlAsSb/InGaAs quantum wells.

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F. Robin, D. Erni, S. Costea, P. Cristea, X. Cui, Y. Fedoryshyn, E. Gini, C. Hafner, R. Harbers, J. Holzman, H.-J. Lohe, P. Ma, K. Rauscher, R. Scollo, G. Stark, P. Strasser, W. Vogt, R. Wüest, and H. Jäckel "Photonic integration for high-density and multifunctionality in the InP-material system", Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 612415 (3 March 2006); https://doi.org/10.1117/12.652109

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