Paper
2 March 2006 Physical vapor transport crystal growth of ZnO
J. Carlos Rojo, Shanshan Liang, Hui Chen, Michael Dudley
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Abstract
Physical vapor transport (PVT) growth of mm-size, polycrystalline ZnO has been demonstrated at temperatures exceeding 1600°C under air at atmospheric pressure. Scanning electron microscopy (SEM) analysis revealed the growth of grains and microcrystals with strong faceted morphologies suggesting near-equilibrium growth conditions. In addition, a temperature-dependent formula for the O2 sticking coefficient has been developed to predict the maximum growth rate of PVT ZnO. Combining this formula with an existing one-dimensional analytical model for PVT growth of bulk AlN, the value of the growth rate of PVT ZnO as a function of temperature and oxygen vapor partial pressure has been studied. This analysis predicts that growth rates in the order of 1mm/h could be theoretically achieved using the PVT method under non-stoichiometric oxygen-rich vapor pressures and temperatures exceeding 1600°C.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Carlos Rojo, Shanshan Liang, Hui Chen, and Michael Dudley "Physical vapor transport crystal growth of ZnO", Proc. SPIE 6122, Zinc Oxide Materials and Devices, 61220Q (2 March 2006); https://doi.org/10.1117/12.656322
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Cited by 7 scholarly publications.
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KEYWORDS
Zinc oxide

Crystals

Aluminum nitride

Zinc

Scanning electron microscopy

Binary data

Chemical species

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