Tunable THz detector based on a grating gated field-effect transistor

E. A. Shaner; Mark Lee; M. C. Wanke; A. D. Grine; J. L. Reno; S. J. Allen

doi:10.1117/12.646089

7 March 2006 Tunable THz detector based on a grating gated field-effect transistor

E. A. Shaner, Mark Lee, M. C. Wanke, A. D. Grine, J. L. Reno, S. J. Allen

Proceedings Volume 6120, Terahertz and Gigahertz Electronics and Photonics V; 612006 (2006) https://doi.org/10.1117/12.646089
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

A split-grating-gate detector design has been implemented in an effort to combine the tunability of the basic grating-gate detector with the high responsivity observed in these detectors when approaching the pinchoff regime. The redesign of the gates by itself offers several orders of magnitude improvement in resonant responsivity. Further improvements are gained by placing the detector element on a thermally isolating membrane in order to increase the effects of lattice heating on the device response.

Citation Download Citation

E. A. Shaner, Mark Lee, M. C. Wanke, A. D. Grine, J. L. Reno, and S. J. Allen "Tunable THz detector based on a grating gated field-effect transistor", Proc. SPIE 6120, Terahertz and Gigahertz Electronics and Photonics V, 612006 (7 March 2006); https://doi.org/10.1117/12.646089

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