Optimization study on active layers and optical performance for 1.3-&#956;m AlGaInAs and InGaNAs semiconductor lasers

Yen-Kuang Kuo; Sheng-Horng Yen; Ming-Wei Yao

doi:10.1117/12.645196

28 February 2006 Optimization study on active layers and optical performance for 1.3-μm AlGaInAs and InGaNAs semiconductor lasers

Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao

Author Affiliations +

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 611526 (2006) https://doi.org/10.1117/12.645196
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

The 1.3-μm semiconductor material systems are numerically studied with a LASTIP simulation program. The optimum active layer materials of AlGaInAs/InP and InGaNAs/GaAs system are suggested. For the AlGaInAs/InP system, we optimize the structure by varying the number of quantum wells, the linear GRINSCH, and the compensated tensile strain in barriers. The optimized active structure possesses four quantum wells, linear GRINSCH, and a compensated tensile strain in the barrier of 0.325% at an emission wavelength of 1.3 μm. The characteristic temperature can be improved to 99.4K, 51.0K, and 68.6K as it is operating among 288K~318K, 318K~348K, and 288K~348K respectively. Furthermore, the optimized structure can also enhance the stimulated recombination rate and reduce the Auger recombination rate because of the compensated tensile strain in barriers. The simulation results show that the active layer with a certain amount of compensated tensile strain in barriers is beneficial for improving the laser performance. On the other hand, the performance of the InGaNAs/GaAs lasers with quantum wells of different compressive strains is investigated. The wavelength of InGaNAs/GaAs system is about 1.3 μm if the Ga composition in quantum wells is 0.54. The results of numerical simulation suggest that the stimulated recombination rate is larger and the Auger recombination rate is smaller when the Ga composition in quantum well is 0.50.

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Yen-Kuang Kuo, Sheng-Horng Yen, and Ming-Wei Yao "Optimization study on active layers and optical performance for 1.3-μm AlGaInAs and InGaNAs semiconductor lasers", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611526 (28 February 2006); https://doi.org/10.1117/12.645196

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KEYWORDS

Gallium

Quantum wells

Electrons

Semiconductor lasers

Numerical simulations

Optical simulations

Gallium arsenide

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