Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition

Wei Yu; Wanbing Lu; Chunsheng Wang; Wenge Ding; Guangsheng Fu

doi:10.1117/12.667714

23 January 2006 Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition

Wei Yu, Wanbing Lu, Chunsheng Wang, Wenge Ding, Guangsheng Fu

Author Affiliations +

Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290Y (2006) https://doi.org/10.1117/12.667714
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

Silicon carbide thin films are prepared by helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) using a gas mixture of silane, methane, and hydrogen at a constant gas flow ratio under varying negative DC bias voltage. The structural and optical properties of the deposited films are investigated using Fourier transform infrared spectra (FTIR), ultraviolet-visible (UV-VIS) transmission spectra, and scanning electron microscopy (SEM). It is found that by applying the moderate bias on the substrates to accelerate the energetic ions, nanocrystalline silicon carbide can be deposited at lower onset temperature than without bias, and the crystalline grain size of the films is smaller and more uniform. The mechanism about the enhancing effect of the bias is discussed on the performance of positive ions in the plasma.

Citation Download Citation

Wei Yu, Wanbing Lu, Chunsheng Wang, Wenge Ding, and Guangsheng Fu "Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290Y (23 January 2006); https://doi.org/10.1117/12.667714

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