Paper
5 December 2005 Tandem electro-absorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short-pulse generation
Q. Zhao, J. Q. Pan, J. Zhang, G. T. Zhou, J. Wu, L. F. Wang, W. Wang
Author Affiliations +
Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60200O (2005) https://doi.org/10.1117/12.634032
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area growth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio when coupled into a single mode fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Q. Zhao, J. Q. Pan, J. Zhang, G. T. Zhou, J. Wu, L. F. Wang, and W. Wang "Tandem electro-absorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short-pulse generation", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200O (5 December 2005); https://doi.org/10.1117/12.634032
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KEYWORDS
Modulators

Metalorganic chemical vapor deposition

Integrated optics

Fabrication

Picosecond phenomena

Signal attenuation

Single mode fibers

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