Paper
5 November 2005 First 65nm tape-out using inverse lithography technology (ILT)
Author Affiliations +
Abstract
This paper presents SMIC's first 65nm tape out results, in particularly, using ILT. ILT mathematically determines the mask features that produce the desired on-wafer results with best wafer pattern fidelity, largest process window or both. SMIC applied it to its first 65nm tape-out to study ILT performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first test case, because SRAM bit-cells contain features which are challenging lithographically. Mask patterns generated from both conventional OPC and ILT were placed on the mask side-by-side. Mask manufacturability (including fracturing, writing time, inspection, and metrology) and wafer print performance of ILT were studied. The results demonstrated that ILT achieved better CD accuracy, produced substantially larger process window than conventional OPC, and met SMIC's 65nm process window requirements.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Yuan Hung, Bin Zhang, Deming Tang, Eric Guo, Linyong Pang, Yong Liu, Andrew Moore, and Kechang Wang "First 65nm tape-out using inverse lithography technology (ILT)", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921U (5 November 2005); https://doi.org/10.1117/12.632415
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Semiconducting wafers

Optical proximity correction

Lithography

Vestigial sideband modulation

Inspection

Wafer-level optics

RELATED CONTENT

Mask cost and cycle time reduction
Proceedings of SPIE (August 28 2003)
Separable OPC models for computational lithography
Proceedings of SPIE (May 19 2008)
Impact of OPC aggressiveness on mask manufacturability
Proceedings of SPIE (August 28 2003)
Real-world impacts of inverse lithography technology
Proceedings of SPIE (November 05 2005)

Back to Top