Study of the recombination zone of the NPB/Alq3 mixed layer organic light-emitting device

Tien-Chun Lin; Chih-Hung Hsiao; Jiun-Haw Lee

doi:10.1117/12.617055

9 October 2005 Study of the recombination zone of the NPB/Alq3 mixed layer organic light-emitting device

Tien-Chun Lin, Chih-Hung Hsiao, Jiun-Haw Lee

Proceedings Volume 5937, Organic Light-Emitting Materials and Devices IX; 59371Q (2005) https://doi.org/10.1117/12.617055
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

In this paper, we demonstrated methods for determining the recombination zone in a mixed-host (MH) organic light-emitting device (OLED). The host of the emitting layer material in this device consists of a hole transport layer and an electron transport layer fabricated by co-evaporation. By comparing the spectra shift between bilayer and MH OLEDs, the recombination position with different mixing concentration can be determined. It showed the recombination zone shifts from the anode to the cathode side with increasing NPB mixing ratio.

Citation Download Citation

Tien-Chun Lin, Chih-Hung Hsiao, and Jiun-Haw Lee "Study of the recombination zone of the NPB/Alq3 mixed layer organic light-emitting device", Proc. SPIE 5937, Organic Light-Emitting Materials and Devices IX, 59371Q (9 October 2005); https://doi.org/10.1117/12.617055

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