Conduction characteristics in HgI<sub>2</sub> devices

W. Brock Alexander; Paul H. Holloway; Mark Davidson; Narada Bradman; John Sandoval; L. van den Berg; Colleen S. Spiegel

doi:10.1117/12.617989

16 September 2005 Conduction characteristics in HgI₂ devices

W. Brock Alexander, Paul H. Holloway, Mark Davidson, Narada Bradman, John Sandoval, L. van den Berg, Colleen S. Spiegel

Proceedings Volume 5922, Hard X-Ray and Gamma-Ray Detector Physics VII; 59220R (2005) https://doi.org/10.1117/12.617989
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

The performance of semiconductor radiation detectors is a function of electronic properties which are in turn related to crystallographic quality. In this paper we used devices from <100> and <110> growth regions of several different HgI₂ crystals grown by the PVD method. We measured I/V characteristics of HgI₂ devices over the range of +/-1000V. Voltages were ramped at different rates and at a range of temperatures (-70^oC to +20^oC) and the dark current decreased with temperature. Several devices exhibited negative differential resistance indicating field enhanced trapping and/or the formation of high-field domains. These devices exhibited NDR at both positive and negative voltages and it was observed that the current peak reduced with repeated cycling of positive bias indicating the reduction of carriers with time. After applying a negative bias, the current peak on the positive bias increased dramatically indicating that the traps were repopulated. These experimental results were modeled with several analytical expressions of conduction processes, considering both semiconductor and insulator models, e.g., Frenkel-Poole, Schottky, and space-charge-limited emission, toward lending insight to mechanisms resulting in HgI₂ detector conditioning.

Citation Download Citation

W. Brock Alexander, Paul H. Holloway, Mark Davidson, Narada Bradman, John Sandoval, L. van den Berg, and Colleen S. Spiegel "Conduction characteristics in HgI₂ devices", Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220R (16 September 2005); https://doi.org/10.1117/12.617989

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