Paper
29 August 2005 First results on GaAs blocked impurity band (BIB) structures for far-infrared detector arrays
L. A. Reichertz, B. L. Cardozo, J. W. Beeman, D. I. Larsen, S. Tschanz, G. Jakob, R. Katterloher, N. M. Haegel, E. E. Haller
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Abstract
We are developing a GaAs photoconductive detector for far-infrared (FIR) astronomy. A detector based on GaAs in the blocked impurity band (BIB) con.guration is expected to extend the long wavelegth limit of currently available stressed Ge:Ga photoconductors up to about 330 microns. Without the need of uniaxial stress applied to the crystal, this would furthermore allow the fabrication of single chip arrays with a large number of pixels. We are reporting results of the characterization of preliminary GaAs BIB test structures. The experimental work is supported by numerical modeling that includes all contact and space charge effects.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. A. Reichertz, B. L. Cardozo, J. W. Beeman, D. I. Larsen, S. Tschanz, G. Jakob, R. Katterloher, N. M. Haegel, and E. E. Haller "First results on GaAs blocked impurity band (BIB) structures for far-infrared detector arrays", Proc. SPIE 5883, Infrared Spaceborne Remote Sensing 2005, 58830Q (29 August 2005); https://doi.org/10.1117/12.620156
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Cited by 18 scholarly publications.
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KEYWORDS
Gallium arsenide

Doping

Sensors

Photoresistors

Liquid phase epitaxy

Detector arrays

Absorption

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