MOCVD of CMT

G. T. Jenkin; J. Thompson; M. J. Hyliands; K. T. Woodhouse; V. Vincent

doi:10.1117/12.951204

9 July 1986 MOCVD of CMT

G. T. Jenkin, J. Thompson, M. J. Hyliands, K. T. Woodhouse, V. Vincent

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951204
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

Avalanche photodiodes (APD) based on bulk grown Cd0.7Hg0.3Te ( λ = 1.55 µm) offer significant advantages over the diodes fabricated from group III-V and group IV semiconductors. Metal Organic Chemical Vapour Deposition (MOCVD) is a well established technique for the growth of CMT (CdxHgl-xTe) (0<x<1). The interdiffused multilayer process (IMP) has been implemented on a computer controlled MOCVD system to improve the compositional uniformity of epitaxial films grown by this technique. Currently, this technique is giving compositional uniformity of ≈3% over 1 cm2 on CdTe substrates.

Citation Download Citation

G. T. Jenkin, J. Thompson, M. J. Hyliands, K. T. Woodhouse, and V. Vincent "MOCVD of CMT", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951204

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