InGaAs pin Photodiodes and JFETs on InP:Fe Substrates for Optoelectronic IC's

Helmut Albrecht

doi:10.1117/12.951211

9 July 1986 InGaAs pin Photodiodes and JFETs on InP:Fe Substrates for Optoelectronic IC's

Helmut Albrecht

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951211
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The chip technology and properties of both JFETs and pin photodiodes designed for opto-electronic IC's in InGaAs material grown lattice-matched on semi-insulating InP:Fe substrate are presented. The p-n junction of the devices were fabricated by p-diffusion from Zn-doped spin-on films. For the chip technology a self-aligned process has been developed.

Citation Download Citation

Helmut Albrecht "InGaAs pin Photodiodes and JFETs on InP:Fe Substrates for Optoelectronic IC's", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951211

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