Electro-optic modulators in GaInAsP/InP

J. Krauser; P. Albrecht; C. Bornholdt; W. Doldissen; U. Niggebrugge; H.-P. Nolting; M. Schlak

doi:10.1117/12.951218

9 July 1986 Electro-optic modulators in GaInAsP/InP

J. Krauser, P. Albrecht, C. Bornholdt, W. Doldissen, U. Niggebrugge, H.-P. Nolting, M. Schlak

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951218
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The semiconductor material system InGaAsP on InP is being increasingly used for waveguide based electro-optic devices such as phase modulators, directional coupler modulators, and switches with the long term goal of opto-electronic monolithic integration. We have demonstrated the fabrication of long passive rib waveguides (RWG) with low optical losses (3dB/cm) in this material. Electro-optical light modulation was achieved employing a p-n junction. The linear, quadratic and cubic term of the electro-optic effect could be identified. Design rules for high efficiency modulators is proposed.

Citation Download Citation

J. Krauser, P. Albrecht, C. Bornholdt, W. Doldissen, U. Niggebrugge, H.-P. Nolting, and M. Schlak "Electro-optic modulators in GaInAsP/InP", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951218

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available