High-speed imaging for evaluation of silicon wafer defects

Jun Wang; Ganesha Udupa; Bryan Kok Ann Ngoi

doi:10.1117/12.621673

12 April 2005 High-speed imaging for evaluation of silicon wafer defects

Jun Wang, Ganesha Udupa, Bryan Kok Ann Ngoi

Proceedings Volume 5852, Third International Conference on Experimental Mechanics and Third Conference of the Asian Committee on Experimental Mechanics; (2005) https://doi.org/10.1117/12.621673
Event: Third International Conference on Experimental Mechanics and Third Conference of the Asian Committee on Experimental Mechanics, 2004, -, Singapore

Abstract

A speckle shearing interferometric system is proposed for real-time inspecting sub-surface defects of unpolished silicon wafer. Under dynamic thermal loading, derivative distribution of out-of-plane displacement along a shear direction is measured and homogeneity and regularity of the distribution is indicator of whether impurities or voids exist under the wafer surface. During a continuous thermal stressing, a sequence of speckle patterns are obtained and phase analysis is implemented in time domain. In this paper, the validity of the method for non-destructive testing of sub-surface defects of silicon wafers has been demonstrated.

Citation Download Citation

Jun Wang, Ganesha Udupa, and Bryan Kok Ann Ngoi "High-speed imaging for evaluation of silicon wafer defects", Proc. SPIE 5852, Third International Conference on Experimental Mechanics and Third Conference of the Asian Committee on Experimental Mechanics, (12 April 2005); https://doi.org/10.1117/12.621673

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