Photosensitivity of p-Si/n-Cd1-xZnxS heterojunctions in visible and near IR region of spectrum

H. M. Mamedov; H. A. Hasanov

doi:10.1117/12.628695

7 June 2005 Photosensitivity of p-Si/n-Cd_1-xZn_xS heterojunctions in visible and near IR region of spectrum

H. M. Mamedov, H. A. Hasanov

Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628695
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation

Abstract

p-Si/n-Cd_1-xZn_xS heterojunction are prepared by the electrodeposition method. Electrical and photoelectrical measurements have been carried out on heterojunctions having varying Cd_1-xZn_xS films composition 0 ≤ x ≤ 0.8 heart treatment temperature and time. It was found that annealing the heterojunctions at T_a=350 ÷ 380°C for τ_a=5÷8 min in air leads to an increase of photosensitivity in the 0.8÷1.34 μm spectral region. The detectivity, open circuit photovoltage and short circuit photocurrent density for heterojunctions p-Si/Cd_0.3Zn_0.7S were D*=(5÷8)•10⁶cm•Hs^1/2•W^-1, V_oc=0.6 V _H I_sc=5.6 mA/cm², respectively.

Citation Download Citation

H. M. Mamedov and H. A. Hasanov "Photosensitivity of p-Si/n-Cd_1-xZn_xS heterojunctions in visible and near IR region of spectrum", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628695

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